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| NTMSD3P102R2 P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package Features * High Efficiency Components in a Single SO-8 Package * High Density Power MOSFET with Low RDS(on), Schottky Diode with Low VF * Independent Pin-Outs for MOSFET and Schottky Die Allowing for Flexibility in Application Use * Less Component Placement for Board Space Savings * SO-8 Surface Mount Package, Mounting Information for SO-8 Package Provided * Pb-Free Packages are Available Applications * DC-DC Converters * Low Voltage Motor Control * Power Management in Portable and Battery-Powered Products, i.e.: Computers, Printers, PCMCIA Cards, Cellular and Cordless Telephones MOSFET MAXIMUM RATINGS (TJ = 25C unless otherwise noted). Rating Drain-to-Source Voltage Gate-to-Source Voltage - Continuous Thermal Resistance - Junction-to-Ambient (Note 1) Total Power Dissipation @ TA = 25C Continuous Drain Current @ TA = 25C Continuous Drain Current @ TA = 70C Pulsed Drain Current (Note 4) Thermal Resistance - Junction-to-Ambient (Note 2) Total Power Dissipation @ TA = 25C Continuous Drain Current @ TA = 25C Continuous Drain Current @ TA = 70C Pulsed Drain Current (Note 4) Thermal Resistance - Junction-to-Ambient (Note 3) Total Power Dissipation @ TA = 25C Continuous Drain Current @ TA = 25C Continuous Drain Current @ TA = 70C Pulsed Drain Current (Note 4) Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy - Starting TJ = 25C (VDD = -20 Vdc, VGS = -4.5 Vdc, Peak IL = -7.5 Apk, L = 5 mH, RG = 25 W) Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds Symbol VDSS VGS RqJA PD ID ID IDM RqJA PD ID ID IDM RqJA PD ID ID IDM TJ, Tstg EAS Value -20 "20 171 0.73 -2.34 -1.87 -8.0 100 1.25 -3.05 -2.44 -12 62.5 2.0 -3.86 -3.10 -15 -55 to +150 140 Unit V V C/W W A A A C/W W A A A C/W W A A A C mJ FETKYTM http://onsemi.com MOSFET -3.05 AMPERES -20 VOLTS 0.085 W @ VGS = -10 V SCHOTTKY DIODE 1.0 AMPERE 20 VOLTS 470 mV @ IF = 1.0 A A A S G 1 2 3 4 5 (TOP VIEW) 8 7 6 C C D D MARKING DIAGRAM & PIN ASSIGNMENT 8 1 SO-8 CASE 751 STYLE 18 E3P1 xx A Y WW G 8 C C DD E3P1xx AYWW G G 1 A A SG = Device Code = 02 or S = Assembly Location = Year = Work Week = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION TL 260 C Device NTMSD3P102R2 NTMSD3P102R2G NTMSD3P102R2SG Package SO-8 Shipping 2500/Tape & Reel Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Minimum FR-4 or G-10 PCB, Steady State. 2. Mounted onto a 2 square FR-4 Board (1 in sq, 2 oz Cu 0.06 thick single-sided), Steady State. 3. Mounted onto a 2 square FR-4 Board (1 in sq, 2 oz Cu 0.06 thick single sided), t 10 seconds. 4. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%. SO-8 2500/Tape & Reel (Pb-Free) SO-8 2500/Tape & Reel (Pb-Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NTMSD3P102R2/D (c) Semiconductor Components Industries, LLC, 2006 March, 2006 - Rev. 2 1 NTMSD3P102R2 SCHOTTKY MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Peak Repetitive Reverse Voltage DC Blocking Voltage Thermal Resistance - Junction-to-Ambient (Note 5) Thermal Resistance - Junction-to-Ambient (Note 6) Thermal Resistance - Junction-to-Ambient (Note 7) Average Forward Current (Note 7) (Rated VR, TA = 100C) Peak Repetitive Forward Current (Note 7) (Rated VR, Square Wave, 20 kHz, TA = 105C) Non-Repetitive Peak Surge Current (Note 7) (Surge Applied at Rated Load Conditions, Half-Wave, Single Phase, 60 Hz) Symbol VRRM VR RqJA RqJA RqJA IO IFRM IFSM Value 20 204 122 83 1.0 2.0 20 Unit V C/W C/W C/W A A A Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 5. Minimum FR-4 or G-10 PCB, Steady State. 6. Mounted onto a 2 square FR-4 Board (1 in sq, 2 oz Cu 0.06 thick single-sided), Steady State. 7. Mounted onto a 2 square FR-4 Board (1 in sq, 2 oz Cu 0.06 thick single sided), t 10 seconds. SCHOTTKY ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) (Note 8) Characteristic Maximum Instantaneous Forward Voltage IF = 1.0 Adc IF = 2.0 Adc IF = 1.0 Adc IF = 2.0 Adc VR = 20 Vdc VR = 20 Vdc Symbol VF TJ = 25C 0.47 0.58 TJ = 25C 0.05 dV/dt 10,000 Value TJ = 125C 0.39 0.53 TJ = 125C 10 V/ms Unit Volts Maximum Instantaneous Forward Voltage VF Volts Maximum Instantaneous Reverse Current Maximum Voltage Rate of Change IR mA 8. Indicates Pulse Test: Pulse Width = 300 ms max, Duty Cycle = 2%. http://onsemi.com 2 NTMSD3P102R2 MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) (Note 9) Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (VGS = 0 Vdc, ID = -250 mAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = -20 Vdc, VGS = 0 Vdc, TJ = 25C) (VDS = -20 Vdc, VGS = 0 Vdc, TJ = 125C) Gate-Body Leakage Current (VGS = -20 Vdc, VDS = 0 Vdc) Gate-Body Leakage Current (VGS = +20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS Gate Threshold Voltage (VDS = VGS, ID = -250 mAdc) Temperature Coefficient (Negative) Static Drain-to-Source On-State Resistance (VGS = -10 Vdc, ID = -3.05 Adc) (VGS = -4.5 Vdc, ID = -1.5 Adc) Forward Transconductance (VDS = -15 Vdc, ID = -3.05 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance (VDS = -16 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Ciss Coss Crss td(on) (VDD = -20 Vdc, ID = -3.05 Adc, VGS = -10 Vdc, RG = 6.0 W) tr td(off) tf td(on) (VDD = -20 Vdc, ID = -1.5 Adc, VGS = -4.5 Vdc, RG = 6.0 W) tr td(off) tf (VDS = -20 Vdc, VGS = -10 Vdc, ID = -3.05 Adc) Qtot Qgs Qgd VSD trr ta tb QRR - - - - - - - - - - - - - - - - - - - - 518 190 70 12 16 45 45 16 42 32 35 16 2.0 4.5 -0.96 -0.78 34 18 16 0.03 750 350 135 22 30 80 80 - - - - 25 - - -1.25 - - - - - mC Vdc ns nC ns ns pF VGS(th) Vdc -1.0 - - - - -1.7 3.6 0.063 0.090 5.0 -2.5 - 0.085 0.125 - W V(BR)DSS Vdc -20 - - - - - - -30 - - - - - - -1.0 -25 -100 nAdc 100 mV/C mAdc Symbol Min Typ Max Unit IDSS IGSS IGSS nAdc RDS(on) gFS Mhos SWITCHING CHARACTERISTICS (Notes 10 & 11) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge BODY-DRAIN DIODE RATINGS (Note 10) Diode Forward On-Voltage Reverse Recovery Time (IS = -3.05 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms) Reverse Recovery Stored Charge 9. Handling precautions to protect against electrostatic discharge are mandatory. 10. Indicates Pulse Test: Pulse Width = 300 ms max, Duty Cycle = 2%. 11. Switching characteristics are independent of operating junction temperature. (IS = -3.05 Adc, VGS = 0 Vdc) (IS = -3.05 Adc, VGS = 0 Vdc, TJ = 125C) http://onsemi.com 3 NTMSD3P102R2 TYPICAL MOSFET ELECTRICAL CHARACTERISTICS 6 -ID, DRAIN CURRENT (AMPS) 5 4 TJ = 25C 3 2 1 0 6 -ID, DRAIN CURRENT (AMPS) VGS = -4.4 V VGS = -4 V VGS = -4.6 V VGS = -4.8 V VGS = -3.6 V VGS = -2.8 V VGS = -3.2 V VGS = -5 V VGS = -2.6 V VGS = -3 V VDS > = -10 V 5 4 TJ = 100C 3 2 1 0 TJ = 25C TJ = -55C VGS = -10 V VGS = -8 V VGS = -6 V 0 0.25 0.5 0.75 1 1.25 1.5 1.75 2 1 2 3 4 5 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 3 4 5 6 7 8 ID = -3.05 A TJ = 25C RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 2 Figure 2. Transfer Characteristics ID = -1.5 A TJ = 25C 3 4 5 6 7 -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 3. On-Resistance vs. Gate-to-Source Voltage RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 0.25 TJ = 25C 0.2 VGS = -4.5 V 1.6 1.4 Figure 4. On-Resistance vs. Gate-to-Source Voltage ID = -3.05 A VGS = -10 V 1.2 1 0.8 0.6 -50 0.15 VGS = -10 V 0.1 0.05 1 2 3 4 5 6 -25 0 25 50 75 100 125 150 -ID, DRAIN CURRENT (AMPS) TJ, JUNCTION TEMPERATURE (C) Figure 5. On-Resistance vs. Drain Current and Gate Voltage Figure 6. On Resistance Variation with Temperature http://onsemi.com 4 NTMSD3P102R2 10000 VGS = 0 V C, CAPACITANCE (pF) 1200 1000 800 600 400 200 VDS = 0 V VGS = 0 V Ciss IDSS, LEAKAGE (nA) 1000 TJ = 150C Crss Ciss Coss Crss 100 TJ = 125C TJ = 25C 10 2 4 6 8 10 12 14 16 18 20 0 10 -VGS 5 0 5 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) -VDS 10 15 20 -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 7. Drain-to-Source Leakage Current vs. Voltage 12 10 8 6 4 2 0 Q1 Q2 ID = -3.05 A TJ = 25C 0 2 4 6 8 10 12 14 Qg, TOTAL GATE CHARGE (nC) VDS VGS 12 8 4 0 16 1 QT 24 1000 20 16 100 Figure 8. Capacitance Variation VDS = -20 V ID = -3.05 A VGS = -10 V td(off) tf 10 td(on) t, TIME (ns) tr 1 10 RG, GATE RESISTANCE (W) 100 Figure 9. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge 1000 VDS = -20 V ID = -1.5 A VGS = -4.5 V 3 IS, SOURCE CURRENT (AMPS) 2.5 2 1.5 1 0.5 Figure 10. Resistive Switching Time Variation vs. Gate Resistance VGS = 0 V TJ = 25C t, TIME (ns) 100 tr tf td(off) td(on) 10 1 10 RG, GATE RESISTANCE (W) 100 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 11. Resistive Switching Time Variation vs. Gate Resistance Figure 12. Diode Forward Voltage vs. Current http://onsemi.com 5 NTMSD3P102R2 di/dt IS trr ta tb TIME tp IS 0.25 IS Figure 13. Diode Reverse Recovery Waveform 1.0 Rthja(t), EFFECTIVE TRANSIENT THERMAL RESPONSE D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse 1E-02 1E-01 1E+00 t, TIME (s) 1E+01 1E+02 Normalized to RqJA at Steady State (1 pad) Chip Junction 2.32 W 18.5 W 50.9 W 37.1 W 56.8 W 24.4 W 0.0014 F 0.0073 F 0.022 F 0.105 F 0.484 F 3.68 F Ambient 1E+03 0.01 1E-03 Figure 14. FET Thermal Response TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS 10 IF, INSTANTANEOUS FORWARD CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) 10 TJ = 125C TJ = 125C 1.0 85C 25C 1.0 85C 25C -40 C 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 15. Typical Forward Voltage Figure 16. Maximum Forward Voltage http://onsemi.com 6 NTMSD3P102R2 IR, MAXIMUM REVERSE CURRENT (AMPS) 1E-2 IR , REVERSE CURRENT (AMPS) TJ = 125C 85C 1E-1 TJ = 125C 1E-3 1E-4 1E-5 25C 1E-2 1E-3 1E-4 25C 1E-5 1E-6 1E-6 1E-7 0 5.0 10 15 20 0 5.0 10 15 20 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 17. Typical Reverse Current Figure 18. Maximum Reverse Current 1000 TYPICAL CAPACITANCE AT 0 V = 170 pF C, CAPACITANCE (pF) IO, AVERAGE FORWARD CURRENT (AMPS) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 dc SQUARE WAVE Ipk/Io = p Ipk/Io = 5.0 Ipk/Io = 10 Ipk/Io = 20 FREQ = 20 kHz 100 10 0 5.0 10 15 20 60 80 100 120 140 160 VR, REVERSE VOLTAGE (VOLTS) TA, AMBIENT TEMPERATURE (C) Figure 19. Typical Capacitance Figure 20. Current Derating http://onsemi.com 7 NTMSD3P102R2 TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS PFO, AVERAGE POWER DISSIPATION (WATTS) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 0.5 1.0 1.5 2.0 Ipk/Io = p Ipk/Io = 5.0 Ipk/Io = 10 Ipk/Io = 20 SQUARE WAVE dc IO, AVERAGE FORWARD CURRENT (AMPS) Figure 21. Forward Power Dissipation 1.0 Rthja(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 NORMALIZED TO RqJA AT STEADY STATE (1 PAD) 0.0031 W CHIP JUNCTION 0.0014 F SINGLE PULSE 0.0154 W 0.0082 F 0.1521 W 0.4575 W 0.3719 W 0.1052 F 2.7041 F 158.64 F AMBIENT 1.0E-03 1.0E-02 1.0E-01 t, TIME (s) 1.0E+00 1.0E+01 1.0E+02 1.0E+03 0.01 0.001 1.0E-05 1.0E-04 Figure 22. Schottky Thermal Response http://onsemi.com 8 NTMSD3P102R2 PACKAGE DIMENSIONS SO-8 NB CASE 751-07 ISSUE AG -X- A 8 5 B 1 S 4 0.25 (0.010) M Y M -Y- G K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751-01 THRU 751-06 ARE OBSOLETE. NEW STANDARD IS 751-07. MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8_ 0.25 0.50 5.80 6.20 INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0_ 8_ 0.010 0.020 0.228 0.244 C -Z- H D 0.25 (0.010) M SEATING PLANE N X 45 _ 0.10 (0.004) M J ZY S X S DIM A B C D G H J K M N S SOLDERING FOOTPRINT* 1.52 0.060 STYLE 18: PIN 1. ANODE 2. ANODE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. CATHODE 8. CATHODE 7.0 0.275 4.0 0.155 0.6 0.024 1.270 0.050 SCALE 6:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. FETKY is a registered trademark of International Rectifier Corporation. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 9 NTMD3P102R2/D |
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